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These calculations provide a simple interpretation for the surface energy in terms of image charges, which allows for an estimation of the interfacial properties in more complex situations of a disordered ionic liquid close to a metal surface.
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Furthermore, we use this framework to calculate analytically the electrostatic contribution to the surface energy of a one dimensional crystal at a metallic wall and its dependence on the Thomas–Fermi screening length. We propose workable approximations suitable for molecular simulations of ionic systems close to metallic walls. In this paper we build upon a previous approach and successive works to calculate the 1-body and 2-body electrostatic energy of ions near a metal in terms of the Thomas–Fermi screening length. This situation is usually accounted for by the celebrated image charges approach, which was further extended to account for the electronic screening properties of the metal at the level of the Thomas–Fermi description. We secondly carried out numerical calculations with screening and thirdly extended our calculations to the case in the presence of the magnetic field and the screening.The electrostatic interaction between two charged particles is strongly modified in the vicinity of a metal. Employing the reliable variational wavefunctions, we firstly calculated energy levels of a donor in a magnetic field without the screening and obtained the good results. To explain our experimental results quantitatively, we carried out variational calculations within the Thomas-Fermi approximation and evaluated the critical donor concentration of the metal-nonmetal transition. Gap states can be expressed as a summation of valence and conduction bands. show a density much greater than this for the first 6A at a metal-Si interface. The shift of the critical donor concentration to a higher one and the magnetic field induced metal-nonmetal transition have been recognized on the application of the magnetic field. With use of Thomas-Fermi screening a local density of only 0.02state/atom eV in the gap gives a screening length of about 3A, while Louie et al. Furthermore, we have observed the considerable narrowing of the Zeeman magneto-absorption with increasing the magnetic field. We have observed the striking line-broadening of the Zeeman magneto-absorption with increasing the donor concentration and the disappearance of that above the critical donor concentration. When the Zeeman magneto-absorption can be observed, the semiconductor is in the nonmetallic phase, and vice versa. Zeeman magneto-absorption of donors for ls*2P_ transition has been investigated in details as the functions of donor concentration, magnetic field and temperature. We have prepared more than 10 kinds of epitaxially grown n-GaAs samples of which concentration is between 10^cm^ and 10^cm^. The critical donor concentration of the metal-nonmetal transition for n-GaAs is 1.6*10^cm^. To study the magnetic field induced metal-nonmetal transition for semiconductors by use of Zeeman magneto-spectroscopy, we have employed n-GaAs, which has a isotropic effective mass of the conduction band and can be fitted to the effective mass approximation. Metal-Nonmetal / Magnetic / Semiconductor / Zeeman / Donor / Thomas-Fermi / Screening / Variational / 1s→2P_遷移 / 濃度広がり / GaAs It is a special case of the more general Lindhard theory in particular, ThomasFermi screening is the limit of the Lindhard formula when the wavevector (the reciprocal of the length-scale of interest) is much. OHYAMA Tyuzi Graduate School of Science, Osaka University, Professor, 大学院・理学研究科, 教授 (40029715)įiscal Year 1997: ¥200,000 (Direct Cost: ¥200,000)įiscal Year 1996: ¥2,000,000 (Direct Cost: ¥2,000,000) ThomasFermi screening is a theoretical approach to calculate the effects of electric field screening by electrons in a solid. NAKATA Hiroyasu Graduate School of Science, Osaka University, Associate Professor, 大学院・理学研究科, 助教授 (60116069) KOBORI Hiromi Graduate School of Science, Osaka University, Research Assistant, 大学院・理学研究科, 助手 (90202069)įUJII Kenichi Graduate School of Science, Osaka University, Research Assistant, 大学院・理学研究科, 助手 (10189988)